| PART |
Description |
Maker |
| UPA1731G-E1 UPA1731G-E2 |
Pch enhancement type power MOS FET
|
NEC
|
| UPA1980 UPA1980TE UPA1980TE-T2 UPA1980TE-T1 |
Pch enhancement-type MOS FET (SBD)
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
|
NEC
|
| UPA1912TE-T2 |
Pch enhancement type MOS FET
|
NEC
|
| UPA1818 UPA1818GR-9JG UPA1818GR-9JG-A UPA1818GR-9J |
Pch enhancement MOS FET
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING P沟道MOS场效应晶体管开
10000 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET POWER, TSSOP-8
|
NEC Corp.
NEC, Corp.
Lattice Semiconductor, Corp.
|
| UPA1857 UPA1857GR-9JG UPA1857GR-9JG-E2 UPA1857GR-9 |
Nch enhancement type power MOS FET
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
|
NEC
|
| SP8J5 |
4V Drive Pch Pch MOS FET
|
Rohm
|
| UPA1722G-E1 UPA1722G-E2 |
N-channel enhancement type power MOS FET
|
NEC
|
| FAN2502 FAN2503S285 FAN2502S27 FAN2502S25 FAN2503S |
150 mA CMOS LDO Regulators
Pch Power MOSFET; ; Package: PS-8; Number Of Pins: 8; R DS On (Ω): (max 0.09) (max 0.041) (max 0.03); I_S (A): (max -5.6)
Pch Power MOSFET; Surface Mount Type: Y; Package: SOP-8; Application Scope: mobile; R DS On (Ω): (max 0.03) (max 0.02); I_S (A): (max -10)
Pch Power MOSFET; Surface Mount Type: N; Package: VS-6; R DS On (Ω): (max 0.09) (max 0.055) (max 0.035); I_S (A): (max -5.5)
Pch Power MOSFET; Surface Mount Type: Y; Package: VS-8; Application Scope: mobile; R DS On (Ω): (max 0.3) (max 0.16) (max 0.11); I_S (A): (max -2.7)
|
Fairchild Semiconductor
|
| UPA1855 UPA1855GR-9JG |
Nch enhancement type MOS FET
MOS FIELD EFFECT TRANSISTOR
|
NEC
|
| FX50KMJ-03-A8 |
High-Speed Switching Use Pch Power MOS FET
|
Renesas Electronics Corporation
|
| FX30KMJ-2 FX30KMJ-2-A8 |
High-Speed Switching Use Pch Power MOS FET
|
Renesas Electronics Corporation
|
